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Nanostars in Highly Si-Doped GaN
[Image: see text] Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging f...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10326854/ https://www.ncbi.nlm.nih.gov/pubmed/37426547 http://dx.doi.org/10.1021/acs.cgd.3c00317 |