Cargando…
Single event response of ferroelectric spacer engineered SOI FinFET at 14 nm technology node
The impact of spacer on the single event response of SOI FinFET at 14 nm technology node is investigated. Based on the device TCAD model, well-calibrated by the experimental data, it is found that the spacer presents the enhancement on single event transient (SET) compared with no spacer configurati...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10333184/ https://www.ncbi.nlm.nih.gov/pubmed/37429875 http://dx.doi.org/10.1038/s41598-023-36952-1 |