Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In(0.8)Ga(0.2)As Photodetectors

Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical perfor...

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Detalles Bibliográficos
Autores principales: Cao, Peng, Wang, Tiancai, Peng, Hongling, Zhuang, Qiandong, Zheng, Wanhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342451/
https://www.ncbi.nlm.nih.gov/pubmed/37444852
http://dx.doi.org/10.3390/ma16134538

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342451/
https://www.ncbi.nlm.nih.gov/pubmed/37444852
http://dx.doi.org/10.3390/ma16134538

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