Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF(4)/O(2) Plasma for Semiconductor Multilevel Interconnects

As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant k ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-capacitance delay. Pla...

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Detalles Bibliográficos
Autores principales: Baek, Namwuk, Park, Yoonsoo, Lim, Hyuna, Cha, Jihwan, Jang, Taesoon, Kang, Shinwon, Jang, Seonhee, Jung, Donggeun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342836/
https://www.ncbi.nlm.nih.gov/pubmed/37444981
http://dx.doi.org/10.3390/ma16134663

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10342836/
https://www.ncbi.nlm.nih.gov/pubmed/37444981
http://dx.doi.org/10.3390/ma16134663

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