A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film

We present a straightforward approach to develop a high-detectivity silicon (Si) sub-bandgap near-infrared (NIR) photodetector (PD) based on textured Si/Au nanoparticle (NP) Schottky junctions coated with graphene film. This is a photovoltaic-type PD that operates at 0 V bias. The texturing of Si is...

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Detalles Bibliográficos
Autores principales: Dai, Xiyuan, Wu, Li, Liu, Kaixin, Ma, Fengyang, Yang, Yanru, Yu, Liang, Sun, Jian, Lu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10346632/
https://www.ncbi.nlm.nih.gov/pubmed/37448033
http://dx.doi.org/10.3390/s23136184

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10346632/
https://www.ncbi.nlm.nih.gov/pubmed/37448033
http://dx.doi.org/10.3390/s23136184

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