Reduced Absorption Due to Defect-Localized Interlayer Excitons in Transition-Metal Dichalcogenide–Graphene Heterostructures

[Image: see text] Associating atomic vacancies to excited-state transport phenomena in two-dimensional semiconductors demands a detailed understanding of the exciton transitions involved. We study the effect of such defects on the electronic and optical properties of WS(2)–graphene and MoS(2)–graphe...

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Detalles Bibliográficos
Autores principales: Hernangómez-Pérez, Daniel, Kleiner, Amir, Refaely-Abramson, Sivan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10347701/
https://www.ncbi.nlm.nih.gov/pubmed/37348129
http://dx.doi.org/10.1021/acs.nanolett.3c01182

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10347701/
https://www.ncbi.nlm.nih.gov/pubmed/37348129
http://dx.doi.org/10.1021/acs.nanolett.3c01182

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