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Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10352327/ https://www.ncbi.nlm.nih.gov/pubmed/37460531 http://dx.doi.org/10.1038/s41467-023-39705-w |