Selective isotropic etching of SiO(2) over Si(3)N(4) using NF(3)/H(2) remote plasma and methanol vapor

In this study, an isotropic etching process of SiO(2) selective to Si(3)N(4) using NF(3)/H(2)/methanol chemistry was investigated. HF was formed using a NF(3)/H(2) remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outsi...

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Detalles Bibliográficos
Autores principales: Gil, Hong Seong, Kim, Doo San, Jang, Yun Jong, Kim, Dea Whan, Kwon, Hea In, Kim, Gyoung Chan, Kim, Dong Woo, Yeom, Geun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10354158/
https://www.ncbi.nlm.nih.gov/pubmed/37463965
http://dx.doi.org/10.1038/s41598-023-38359-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10354158/
https://www.ncbi.nlm.nih.gov/pubmed/37463965
http://dx.doi.org/10.1038/s41598-023-38359-4

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