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Selective isotropic etching of SiO(2) over Si(3)N(4) using NF(3)/H(2) remote plasma and methanol vapor
In this study, an isotropic etching process of SiO(2) selective to Si(3)N(4) using NF(3)/H(2)/methanol chemistry was investigated. HF was formed using a NF(3)/H(2) remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outsi...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10354158/ https://www.ncbi.nlm.nih.gov/pubmed/37463965 http://dx.doi.org/10.1038/s41598-023-38359-4 |