Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system

The development of GaAs based high power side-input photovoltaic converters requires thick (50–100 μm) transparent gradient refraction layers that can be grown by liquid phase epitaxy. Such thick layers can also be used in LED structures. To solve the problem of Al(x)Ga(1-x)As conductivity reduction...

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Detalles Bibliográficos
Autores principales: Khvostikov, Vladimir, Khvostikova, Olga, Potapovich, Nataliia, Vlasov, Alexey, Salii, Roman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10362131/
https://www.ncbi.nlm.nih.gov/pubmed/37483788
http://dx.doi.org/10.1016/j.heliyon.2023.e18063

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10362131/
https://www.ncbi.nlm.nih.gov/pubmed/37483788
http://dx.doi.org/10.1016/j.heliyon.2023.e18063

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