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Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system
The development of GaAs based high power side-input photovoltaic converters requires thick (50–100 μm) transparent gradient refraction layers that can be grown by liquid phase epitaxy. Such thick layers can also be used in LED structures. To solve the problem of Al(x)Ga(1-x)As conductivity reduction...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10362131/ https://www.ncbi.nlm.nih.gov/pubmed/37483788 http://dx.doi.org/10.1016/j.heliyon.2023.e18063 |