A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

The performance and reliability of semiconductor devices scaled down to the sub-nanometer regime are being seriously affected by process-induced variability. To properly assess the impact of the different sources of fluctuations, such as line edge roughness (LER), statistical analyses involving larg...

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Detalles Bibliográficos
Autores principales: García-Loureiro, Antonio, Seoane, Natalia, Fernández, Julián G., Comesaña, Enrique, Pichel, Juan C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10365313/
https://www.ncbi.nlm.nih.gov/pubmed/37486944
http://dx.doi.org/10.1371/journal.pone.0288964

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10365313/
https://www.ncbi.nlm.nih.gov/pubmed/37486944
http://dx.doi.org/10.1371/journal.pone.0288964

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