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A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint
The performance and reliability of semiconductor devices scaled down to the sub-nanometer regime are being seriously affected by process-induced variability. To properly assess the impact of the different sources of fluctuations, such as line edge roughness (LER), statistical analyses involving larg...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10365313/ https://www.ncbi.nlm.nih.gov/pubmed/37486944 http://dx.doi.org/10.1371/journal.pone.0288964 |