The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studie...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhou, Jian, Ma, Fengyang, Chen, Kai, Zhao, Wuyan, Yang, Riyi, Qiao, Chong, Shen, Hong, Su, Wan-Sheng, Lu, Ming, Zheng, Yuxiang, Zhang, Rongjun, Chen, Liangyao, Wang, Songyou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10368006/
https://www.ncbi.nlm.nih.gov/pubmed/37496620
http://dx.doi.org/10.1039/d3na00251a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10368006/
https://www.ncbi.nlm.nih.gov/pubmed/37496620
http://dx.doi.org/10.1039/d3na00251a

Ejemplares similares