Self-aligned patterning of tantalum oxide on Cu/SiO(2) through redox-coupled inherently selective atomic layer deposition

Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by adding an...

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Detalles Bibliográficos
Autores principales: Li, Yicheng, Qi, Zilian, Lan, Yuxiao, Cao, Kun, Wen, Yanwei, Zhang, Jingming, Gu, Eryan, Long, Junzhou, Yan, Jin, Shan, Bin, Chen, Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10372027/
https://www.ncbi.nlm.nih.gov/pubmed/37495604
http://dx.doi.org/10.1038/s41467-023-40249-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10372027/
https://www.ncbi.nlm.nih.gov/pubmed/37495604
http://dx.doi.org/10.1038/s41467-023-40249-2

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