Modulation of Contact Resistance of Dual‐Gated MoS(2) FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts

Achieving low contact resistance (R (C)) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS(2) devices are systematically analyzed as a function of top and bo...

Descripción completa

Detalles Bibliográficos
Autores principales: Ngo, Tien Dat, Huynh, Tuyen, Jung, Hanggyo, Ali, Fida, Jeon, Jongwook, Choi, Min Sup, Yoo, Won Jong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10375162/
https://www.ncbi.nlm.nih.gov/pubmed/37144526
http://dx.doi.org/10.1002/advs.202301400

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10375162/
https://www.ncbi.nlm.nih.gov/pubmed/37144526
http://dx.doi.org/10.1002/advs.202301400

Ejemplares similares