Cargando…

Modulation of Contact Resistance of Dual‐Gated MoS(2) FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts

Achieving low contact resistance (R (C)) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS(2) devices are systematically analyzed as a function of top and bo...

Descripción completa

Detalles Bibliográficos
Autores principales:	Ngo, Tien Dat, Huynh, Tuyen, Jung, Hanggyo, Ali, Fida, Jeon, Jongwook, Choi, Min Sup, Yoo, Won Jong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2023
Materias:	Research Articles
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10375162/ https://www.ncbi.nlm.nih.gov/pubmed/37144526 http://dx.doi.org/10.1002/advs.202301400

Ejemplares similares

Defect Dominated Charge Transport and Fermi Level Pinning in MoS(2)/Metal Contacts
por: Bampoulis, Pantelis, et al.
Publicado: (2017)

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS(2)/Metal Schottky Barriers
por: Zhang, Zhaofu, et al.
Publicado: (2022)

Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation
por: Park, Iksoo, et al.
Publicado: (2022)

On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
por: Mahlouji, Reyhaneh, et al.
Publicado: (2021)

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor
por: Li, Xiao-Xi, et al.
Publicado: (2017)

Gate-tunable contact-induced Fermi-level shift in semimetal
por: Li, Xuanzhang, et al.
Publicado: (2022)

Edge contacts accelerate the response of MoS(2) photodetectors
por: Strauß, Fabian, et al.
Publicado: (2023)

Split-gated point-contact for electrostatic confinement of transport in MoS(2)/h-BN hybrid structures
por: Sharma, Chithra H., et al.
Publicado: (2017)

Operation Mechanism of a MoS(2)/BP Heterojunction FET
por: Lim, Sung Kwan, et al.
Publicado: (2018)

Advances in MoS(2)-Based Field Effect Transistors (FETs)
por: Tong, Xin, et al.
Publicado: (2015)

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS(2) FETs Using Buried-Gate Structures
por: Lee, Ju-Ah, et al.
Publicado: (2023)

Hyper-FET’s Phase-Transition-Materials Design Guidelines for Ultra-Low Power Applications at 3 nm Technology Node
por: Jung, Hanggyo, et al.
Publicado: (2022)

Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors
por: Pelella, Aniello, et al.
Publicado: (2020)

Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures
por: Giannazzo, Filippo, et al.
Publicado: (2017)

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS(2) Flakes
por: Iemmo, Laura, et al.
Publicado: (2020)

Integrated contact lens sensor system based on multifunctional ultrathin MoS(2) transistors
por: Guo, Shiqi, et al.
Publicado: (2021)

Edge-Contact MoS(2) Transistors Fabricated Using Thermal Scanning Probe Lithography
por: Conde-Rubio, Ana, et al.
Publicado: (2022)

Preparation of MoO(3)/MoS(2-E) composite for enhanced photoelectrocatalytic removal of antimony from petrochemical wastewaters
por: AKÇAĞLAR, Sevil
Publicado: (2022)

Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
por: K. C., Santosh, et al.
Publicado: (2016)

Interfacial Properties of Monolayer and Bilayer MoS(2) Contacts with Metals: Beyond the Energy Band Calculations
por: Zhong, Hongxia, et al.
Publicado: (2016)

MoS(2)-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference
por: Kang, Zhe, et al.
Publicado: (2019)

Electric field tunability of the electronic properties and contact types in the MoS(2)/SiH heterostructure
por: Nguyen, Son-Tung, et al.
Publicado: (2022)

Interface contact and modulated electronic properties by in-plain strains in a graphene–MoS(2) heterostructure
por: Wang, Qian, et al.
Publicado: (2023)

Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
por: Yoon, Hyong Seo, et al.
Publicado: (2015)

Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
por: Gupta, Sachin, et al.
Publicado: (2019)

ALD-grown two-dimensional TiS(x) metal contacts for MoS(2) field-effect transistors
por: Mahlouji, Reyhaneh, et al.
Publicado: (2023)

A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts
por: Liu, Xi, et al.
Publicado: (2019)

An Investigation on the Tribological Performances of the SiO(2)/MoS(2) Hybrid Nanofluids for Magnesium Alloy-Steel Contacts
por: Xie, Hongmei, et al.
Publicado: (2016)

Synergistic Effect of MoS(2) and SiO(2) Nanoparticles as Lubricant Additives for Magnesium Alloy–Steel Contacts
por: Xie, Hongmei, et al.
Publicado: (2017)

Improvement of Visible Photodetection of Chemical Vapor Deposition-Grown MoS(2) Devices via Graphene/Au Contacts
por: Hwa, Yeongsik, et al.
Publicado: (2022)

Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors
por: Gao, Qingguo, et al.
Publicado: (2021)

Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance
por: Al-Amin, Chowdhury, et al.
Publicado: (2016)

Work Function Tuning in Two-Dimensional MoS(2) Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts
por: Baik, Seung Su, et al.
Publicado: (2017)

Tunable Contact Types and Interfacial Electronic Properties in TaS(2)/MoS(2) and TaS(2)/WSe(2) Heterostructures
por: Zhu, Xiangjiu, et al.
Publicado: (2023)

Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors
por: Pham, Tung, et al.
Publicado: (2021)

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides
por: Sotthewes, Kai, et al.
Publicado: (2019)

Strong Fermi-Level Pinning in GeS–Metal Nanocontacts
por: Sun, Yuxuan, et al.
Publicado: (2022)

MOS-FET as a Current Sensor in Power Electronics Converters
por: Pajer, Rok, et al.
Publicado: (2015)

Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
por: Fontana, Marcio, et al.
Publicado: (2013)

Contact gating at GHz frequency in graphene
por: Wilmart, Q., et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_h8n1m03l1ucqo3orpqv453md0p