Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

[Image: see text] Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to pro...

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Detalles Bibliográficos
Autores principales: Huang, Chunyi, Dede, Didem, Morgan, Nicholas, Piazza, Valerio, Hu, Xiaobing, Fontcuberta i Morral, Anna, Lauhon, Lincoln J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10375592/
https://www.ncbi.nlm.nih.gov/pubmed/37402180
http://dx.doi.org/10.1021/acs.nanolett.3c00281

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10375592/
https://www.ncbi.nlm.nih.gov/pubmed/37402180
http://dx.doi.org/10.1021/acs.nanolett.3c00281

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