Channel Modeling and Quantization Design for 3D NAND Flash Memory

As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers. However, the new architecture of 3D flash memory leads to new sourc...

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Detalles Bibliográficos
Autores principales: Wang, Cheng, Mei, Zhen, Li, Jun, Shu, Feng, He, Xuan, Kong, Lingjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10378194/
https://www.ncbi.nlm.nih.gov/pubmed/37509912
http://dx.doi.org/10.3390/e25070965

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10378194/
https://www.ncbi.nlm.nih.gov/pubmed/37509912
http://dx.doi.org/10.3390/e25070965

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