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Channel Modeling and Quantization Design for 3D NAND Flash Memory
As the technology scales down, two-dimensional (2D) NAND flash memory has reached its bottleneck. Three-dimensional (3D) NAND flash memory was proposed to further increase the storage capacity by vertically stacking multiple layers. However, the new architecture of 3D flash memory leads to new sourc...
Autores principales: | Wang, Cheng, Mei, Zhen, Li, Jun, Shu, Feng, He, Xuan, Kong, Lingjun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10378194/ https://www.ncbi.nlm.nih.gov/pubmed/37509912 http://dx.doi.org/10.3390/e25070965 |
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