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A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement
This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the overlap of th...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10382404/ https://www.ncbi.nlm.nih.gov/pubmed/37505432 http://dx.doi.org/10.1186/s11671-023-03875-9 |