Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the gen...

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Detalles Bibliográficos
Autores principales: Xie, Haiwu, Liu, Hongxia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383079/
https://www.ncbi.nlm.nih.gov/pubmed/37512724
http://dx.doi.org/10.3390/mi14071413

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383079/
https://www.ncbi.nlm.nih.gov/pubmed/37512724
http://dx.doi.org/10.3390/mi14071413

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