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Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source
In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the gen...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383079/ https://www.ncbi.nlm.nih.gov/pubmed/37512724 http://dx.doi.org/10.3390/mi14071413 |