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On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383355/ https://www.ncbi.nlm.nih.gov/pubmed/37512317 http://dx.doi.org/10.3390/ma16145043 |
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author | Baek, Seung Yong Efremov, Alexander Bobylev, Alexander Choi, Gilyoung Kwon, Kwang-Ho |
author_facet | Baek, Seung Yong Efremov, Alexander Bobylev, Alexander Choi, Gilyoung Kwon, Kwang-Ho |
author_sort | Baek, Seung Yong |
collection | PubMed |
description | In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF(x) radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface. |
format | Online Article Text |
id | pubmed-10383355 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103833552023-07-30 On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen Baek, Seung Yong Efremov, Alexander Bobylev, Alexander Choi, Gilyoung Kwon, Kwang-Ho Materials (Basel) Article In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF(x) radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface. MDPI 2023-07-17 /pmc/articles/PMC10383355/ /pubmed/37512317 http://dx.doi.org/10.3390/ma16145043 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Baek, Seung Yong Efremov, Alexander Bobylev, Alexander Choi, Gilyoung Kwon, Kwang-Ho On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title_full | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title_fullStr | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title_full_unstemmed | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title_short | On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen |
title_sort | on relationships between plasma chemistry and surface reaction kinetics providing the etching of silicon in cf(4), chf(3), and c(4)f(8) gases mixed with oxygen |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383355/ https://www.ncbi.nlm.nih.gov/pubmed/37512317 http://dx.doi.org/10.3390/ma16145043 |
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