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On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen

In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters...

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Autores principales: Baek, Seung Yong, Efremov, Alexander, Bobylev, Alexander, Choi, Gilyoung, Kwon, Kwang-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383355/
https://www.ncbi.nlm.nih.gov/pubmed/37512317
http://dx.doi.org/10.3390/ma16145043
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author Baek, Seung Yong
Efremov, Alexander
Bobylev, Alexander
Choi, Gilyoung
Kwon, Kwang-Ho
author_facet Baek, Seung Yong
Efremov, Alexander
Bobylev, Alexander
Choi, Gilyoung
Kwon, Kwang-Ho
author_sort Baek, Seung Yong
collection PubMed
description In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF(x) radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface.
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spelling pubmed-103833552023-07-30 On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen Baek, Seung Yong Efremov, Alexander Bobylev, Alexander Choi, Gilyoung Kwon, Kwang-Ho Materials (Basel) Article In this work, we discuss the effects of component ratios on plasma characteristics, chemistry of active species, and silicon etching kinetics in CF(4) + O(2), CHF(3) + O(2), and C(4)F(8) + O(2) gas mixtures. It was shown that the addition of O(2) changes electrons- and ions-related plasma parameters rapidly suppresses densities of CF(x) radicals and influences F atoms kinetics through their formation rate and/or loss frequency. The dominant Si etching mechanism in all three cases is the chemical interaction with F atoms featured by the nonconstant reaction probability. The latter reflects both the remaining amount of fluorocarbon polymer and oxidation of silicon surface. MDPI 2023-07-17 /pmc/articles/PMC10383355/ /pubmed/37512317 http://dx.doi.org/10.3390/ma16145043 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Baek, Seung Yong
Efremov, Alexander
Bobylev, Alexander
Choi, Gilyoung
Kwon, Kwang-Ho
On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title_full On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title_fullStr On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title_full_unstemmed On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title_short On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF(4), CHF(3), and C(4)F(8) Gases Mixed with Oxygen
title_sort on relationships between plasma chemistry and surface reaction kinetics providing the etching of silicon in cf(4), chf(3), and c(4)f(8) gases mixed with oxygen
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383355/
https://www.ncbi.nlm.nih.gov/pubmed/37512317
http://dx.doi.org/10.3390/ma16145043
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