Mechanism of the Wake-Up and the Split-Up in AlO(x)/Hf(0.5)Zr(0.5)O(x) Film

Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, whic...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Min-Jin, Kim, Cheol-Jun, Kang, Bo-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383622/
https://www.ncbi.nlm.nih.gov/pubmed/37513157
http://dx.doi.org/10.3390/nano13142146

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383622/
https://www.ncbi.nlm.nih.gov/pubmed/37513157
http://dx.doi.org/10.3390/nano13142146

Ejemplares similares