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Mechanism of the Wake-Up and the Split-Up in AlO(x)/Hf(0.5)Zr(0.5)O(x) Film
Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, whic...
Autores principales: | Kim, Min-Jin, Kim, Cheol-Jun, Kang, Bo-Soo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383622/ https://www.ncbi.nlm.nih.gov/pubmed/37513157 http://dx.doi.org/10.3390/nano13142146 |
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