Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types...

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Detalles Bibliográficos
Autores principales: Han, Youngmin, Lee, Dong Hyun, Cho, Eou-Sik, Kwon, Sang Jik, Yoo, Hocheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383919/
https://www.ncbi.nlm.nih.gov/pubmed/37512704
http://dx.doi.org/10.3390/mi14071394

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10383919/
https://www.ncbi.nlm.nih.gov/pubmed/37512704
http://dx.doi.org/10.3390/mi14071394

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