Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO(3−x)) Thin Films

The resistive random-access memory (RRAM) with multi-level storage capability has been considered one of the most promising emerging devices to mimic synaptic behavior and accelerate analog computations. In this study, we investigated the reset-first bipolar resistive switching (RS) and multi-level...

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Detalles Bibliográficos
Autores principales: Kim, Daewoo, Lee, Jeongwoo, Kim, Jaeyeon, Sohn, Hyunchul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384036/
https://www.ncbi.nlm.nih.gov/pubmed/37512267
http://dx.doi.org/10.3390/ma16144992

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384036/
https://www.ncbi.nlm.nih.gov/pubmed/37512267
http://dx.doi.org/10.3390/ma16144992

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