Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and da...

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Detalles Bibliográficos
Autores principales: Jin, Qi, Yuan, Julong, Zhou, Jianxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384324/
https://www.ncbi.nlm.nih.gov/pubmed/37512641
http://dx.doi.org/10.3390/mi14071331

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384324/
https://www.ncbi.nlm.nih.gov/pubmed/37512641
http://dx.doi.org/10.3390/mi14071331

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