Cargando…

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and da...

Descripción completa

Detalles Bibliográficos
Autores principales:	Jin, Qi, Yuan, Julong, Zhou, Jianxing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384324/ https://www.ncbi.nlm.nih.gov/pubmed/37512641 http://dx.doi.org/10.3390/mi14071331

Ejemplares similares

Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching
por: Xu, Shaozhen, et al.
Publicado: (2023)

Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface
por: Perez-Guzman, Manuel Alejandro, et al.
Publicado: (2018)

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
por: Racka-Szmidt, Katarzyna, et al.
Publicado: (2021)

Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer
por: Li, Peng, et al.
Publicado: (2023)

High thermal conductivity in wafer-scale cubic silicon carbide crystals
por: Cheng, Zhe, et al.
Publicado: (2022)

A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process
por: Rao, Kang, et al.
Publicado: (2019)

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer
por: Zhao, Tianchen, et al.
Publicado: (2020)

Calcified Nanostructured Silicon Wafer Surfaces for Biosensing: Effects of Surface Modification on Bioactivity
por: Weis, Robert P., et al.
Publicado: (2002)

Wettability of polytetrafluoroethylene surfaces by plasma etching modifications
por: Kang, Hyomin, et al.
Publicado: (2023)

Process Development for Batch Production of Micro-Milling Tools Made of Silicon Carbide by Means of the Dry Etching Process
por: Wittek, Christian-G. R., et al.
Publicado: (2023)

Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma
por: Seong, Inho, et al.
Publicado: (2022)

Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer
por: Abdur-Rahman, Eyad, et al.
Publicado: (2017)

Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
por: Rohaizar, Muhd Hatim, et al.
Publicado: (2019)

Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma
por: Nguyen, Thi-Thuy-Nga, et al.
Publicado: (2022)

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers
por: Pirnaci, Massimo D., et al.
Publicado: (2021)

Surface Modification Using Assisting Electrodes in Wire Electrical Discharge Machining for Silicon Wafer Preparation
por: Kuo, Chunliang, et al.
Publicado: (2021)

Process technology for silicon carbide devices
por: Zetterling, Carl-Mikael
Publicado: (2001)

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma
por: Kikuchi, Hisaki, et al.
Publicado: (2021)

Influence of the Carbidized Tungsten Surface on the Processes of Interaction with Helium Plasma
por: Skakov, Mazhyn, et al.
Publicado: (2022)

Structure Evolution and Properties Modification for Reaction-Bonded Silicon Carbide
por: Li, Wei, et al.
Publicado: (2022)

Materials and Processes for Schottky Contacts on Silicon Carbide
por: Vivona, Marilena, et al.
Publicado: (2021)

Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells
por: Bonaventura, Gabriele, et al.
Publicado: (2019)

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching
por: Bian, Chenyu, et al.
Publicado: (2022)

Formation of nanostructured silicon surfaces by stain etching
por: Ayat, Maha, et al.
Publicado: (2014)

Femtosecond Laser-Based Modification of PDMS to Electrically Conductive Silicon Carbide
por: Nakajima, Yasutaka, et al.
Publicado: (2018)

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers
por: Chai, Jessica, et al.
Publicado: (2015)

Subsurface Damage in Polishing Process of Silicon Carbide Ceramic
por: Gu, Yan, et al.
Publicado: (2018)

Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
por: Zheng, Panpan, et al.
Publicado: (2022)

Synthesis of Silicon Nitride Nanoparticles by Upcycling Silicon Wafer Waste Using Thermal Plasma Jets
por: Kim, Tae-Hee, et al.
Publicado: (2022)

Effect of Silicon Carbide and Tungsten Carbide on Concrete Composite
por: Idrees, Maria, et al.
Publicado: (2022)

Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
por: Ni, Shu, et al.
Publicado: (2020)

Flash (Ultra-Rapid) Spark-Plasma Sintering of Silicon Carbide
por: Olevsky, Eugene A., et al.
Publicado: (2016)

Surface Phenomena at the Interface between Silicon Carbide and Iron Alloy
por: Cholewa, Mirosław, et al.
Publicado: (2021)

Handbook of silicon wafer cleaning technology
por: Reinhardt, Karen, et al.
Publicado: (2018)

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching
por: Zhang, Xiaomeng, et al.
Publicado: (2023)

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties
por: Li, Xinxin, et al.
Publicado: (2021)

Corrosion Characteristics of Silicon Carbide and Silicon Nitride
por: Munro, R. G., et al.
Publicado: (1993)

Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon
por: Sun, Julia B., et al.
Publicado: (2018)

Surface Modification of Silicone by Dielectric Barrier Discharge Plasma
por: Krawczyk, Krzysztof, et al.
Publicado: (2023)

Exposure to Fibres, Crystalline Silica, Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry
por: Føreland, S., et al.
Publicado: (2008)

Cannot write session to /tmp/vufind_sessions/sess_sb0ch6iu4r4dm4mskvhbt16kvo