A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow...

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Detalles Bibliográficos
Autores principales: Li, Ping, Guo, Jingwei, Hu, Shengdong, Lin, Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384446/
https://www.ncbi.nlm.nih.gov/pubmed/37512592
http://dx.doi.org/10.3390/mi14071282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384446/
https://www.ncbi.nlm.nih.gov/pubmed/37512592
http://dx.doi.org/10.3390/mi14071282

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