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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384446/ https://www.ncbi.nlm.nih.gov/pubmed/37512592 http://dx.doi.org/10.3390/mi14071282 |
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author | Li, Ping Guo, Jingwei Hu, Shengdong Lin, Zhi |
author_facet | Li, Ping Guo, Jingwei Hu, Shengdong Lin, Zhi |
author_sort | Li, Ping |
collection | PubMed |
description | A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow through it. Therefore, the suggested device not only has a low diode cut-in voltage but also entirely suppresses the intrinsic body diode, which will cause bipolar deterioration. In order to clarify the barrier-lowering effect of the MOS-channel diode, an analytical model is proposed. The calibrated simulation results demonstrate that the diode cut-in voltage of the proposed device is decreased from the conventional voltage of 2.7 V to 1.2 V. In addition, due to the split-gate structure, the gate-to-drain charge (Q(GD)) of the proposed device is 20 nC/cm(2), and the reverse-transfer capacitance (C(GD)) is 14 pF/cm(2), which are lower than the Q(GD) of 230 nC/cm(2) and the C(GD) of 105 pF/cm(2) for the conventional one. Therefore, a better high-frequency figure-of-merit and lower switching loss are obtained. |
format | Online Article Text |
id | pubmed-10384446 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103844462023-07-30 A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching Li, Ping Guo, Jingwei Hu, Shengdong Lin, Zhi Micromachines (Basel) Article A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper. During the freewheeling period, the MOS-channel diode with a low potential barrier constrains the reverse current flow through it. Therefore, the suggested device not only has a low diode cut-in voltage but also entirely suppresses the intrinsic body diode, which will cause bipolar deterioration. In order to clarify the barrier-lowering effect of the MOS-channel diode, an analytical model is proposed. The calibrated simulation results demonstrate that the diode cut-in voltage of the proposed device is decreased from the conventional voltage of 2.7 V to 1.2 V. In addition, due to the split-gate structure, the gate-to-drain charge (Q(GD)) of the proposed device is 20 nC/cm(2), and the reverse-transfer capacitance (C(GD)) is 14 pF/cm(2), which are lower than the Q(GD) of 230 nC/cm(2) and the C(GD) of 105 pF/cm(2) for the conventional one. Therefore, a better high-frequency figure-of-merit and lower switching loss are obtained. MDPI 2023-06-22 /pmc/articles/PMC10384446/ /pubmed/37512592 http://dx.doi.org/10.3390/mi14071282 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Li, Ping Guo, Jingwei Hu, Shengdong Lin, Zhi A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title_full | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title_fullStr | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title_full_unstemmed | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title_short | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching |
title_sort | sic planar mosfet with an embedded mos-channel diode to improve reverse conduction and switching |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384446/ https://www.ncbi.nlm.nih.gov/pubmed/37512592 http://dx.doi.org/10.3390/mi14071282 |
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