Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles

Nitrogen is commonly implanted in silicon to suppress the diffusion of self-interstitials and the formation of voids through the creation of nitrogen–vacancy complexes and nitrogen–nitrogen pairs. Yet, identifying a specific N-related defect via spectroscopic means has proven to be non-trivial. Acti...

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Detalles Bibliográficos
Autores principales: Simha, Chloé, Herrero-Saboya, Gabriela, Giacomazzi, Luigi, Martin-Samos, Layla, Hemeryck, Anne, Richard, Nicolas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384624/
https://www.ncbi.nlm.nih.gov/pubmed/37513135
http://dx.doi.org/10.3390/nano13142123

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384624/
https://www.ncbi.nlm.nih.gov/pubmed/37513135
http://dx.doi.org/10.3390/nano13142123

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