Study of Selective Dry Etching Effects of 15-Cycle Si(0.7)Ge(0.3)/Si Multilayer Structure in Gate-All-Around Transistor Process

Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si(0.7)Ge(0.3). Increasing the number of channel-stacking layers is an effective way to improve device current-driving capability and...

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Detalles Bibliográficos
Autores principales: Liu, Enxu, Li, Junjie, Zhou, Na, Chen, Rui, Shao, Hua, Gao, Jianfeng, Zhang, Qingzhu, Kong, Zhenzhen, Lin, Hongxiao, Zhang, Chenchen, Lai, Panpan, Yang, Chaoran, Liu, Yang, Wang, Guilei, Zhao, Chao, Yang, Tao, Yin, Huaxiang, Li, Junfeng, Luo, Jun, Wang, Wenwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384643/
https://www.ncbi.nlm.nih.gov/pubmed/37513138
http://dx.doi.org/10.3390/nano13142127

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384643/
https://www.ncbi.nlm.nih.gov/pubmed/37513138
http://dx.doi.org/10.3390/nano13142127

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