Enhancing the Plasma-Resistance Properties of Li(2)O–Al(2)O(3)–SiO(2) Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation

To develop plasma-resistant glass materials suitable for semiconductor etching processes, we introduced alkaline earth oxides (ROs) into a Li(2)O–Al(2)O(3)–SiO(2) (LAS) glass. Analysis of glass properties with respect to the additives revealed that among the analyzed materials, the LAS material in w...

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Detalles Bibliográficos
Autores principales: Kim, So-Won, Lee, Hwan-Seok, Jun, Deok-Sung, Lee, Seong-Eui, Lee, Joung-Ho, Lee, Hee-Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384723/
https://www.ncbi.nlm.nih.gov/pubmed/37512386
http://dx.doi.org/10.3390/ma16145112

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384723/
https://www.ncbi.nlm.nih.gov/pubmed/37512386
http://dx.doi.org/10.3390/ma16145112

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