Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the implementation of a common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) and gate stack (GS)...

Descripción completa

Detalles Bibliográficos
Autores principales: Singh, Sarabdeep, Solay, Leo Raj, Anand, Sunny, Kumar, Naveen, Ranjan, Ravi, Singh, Amandeep
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384746/
https://www.ncbi.nlm.nih.gov/pubmed/37512666
http://dx.doi.org/10.3390/mi14071357

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10384746/
https://www.ncbi.nlm.nih.gov/pubmed/37512666
http://dx.doi.org/10.3390/mi14071357

Ejemplares similares