Electrical Characteristics of CMOS-Compatible SiO(x)-Based Resistive-Switching Devices

The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-...

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Detalles Bibliográficos
Autores principales: Koryazhkina, Maria N., Filatov, Dmitry O., Tikhov, Stanislav V., Belov, Alexey I., Serov, Dmitry A., Kryukov, Ruslan N., Zubkov, Sergey Yu., Vorontsov, Vladislav A., Pavlov, Dmitry A., Gryaznov, Evgeny G., Orlova, Elena S., Shchanikov, Sergey A., Mikhaylov, Alexey N., Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385009/
https://www.ncbi.nlm.nih.gov/pubmed/37513093
http://dx.doi.org/10.3390/nano13142082

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385009/
https://www.ncbi.nlm.nih.gov/pubmed/37513093
http://dx.doi.org/10.3390/nano13142082

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