Cargando…
Electrical Characteristics of CMOS-Compatible SiO(x)-Based Resistive-Switching Devices
The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-...
Autores principales: | Koryazhkina, Maria N., Filatov, Dmitry O., Tikhov, Stanislav V., Belov, Alexey I., Serov, Dmitry A., Kryukov, Ruslan N., Zubkov, Sergey Yu., Vorontsov, Vladislav A., Pavlov, Dmitry A., Gryaznov, Evgeny G., Orlova, Elena S., Shchanikov, Sergey A., Mikhaylov, Alexey N., Kim, Sungjun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385009/ https://www.ncbi.nlm.nih.gov/pubmed/37513093 http://dx.doi.org/10.3390/nano13142082 |
Ejemplares similares
-
Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics
por: Mikhaylov, Alexey, et al.
Publicado: (2020) -
Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO(2)/Si Dielectric Matrix
por: Korolev, Dmitry S., et al.
Publicado: (2022) -
Stochastic Memristive Interface for Neural Signal Processing
por: Gerasimova, Svetlana A., et al.
Publicado: (2021) -
Toward Reflective Spiking Neural Networks Exploiting Memristive Devices
por: Makarov, Valeri A., et al.
Publicado: (2022) -
Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices
por: Korolev, Dmitry S., et al.
Publicado: (2023)