Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about...

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Detalles Bibliográficos
Autores principales: Yu, Zhiqiang, Jia, Jinhao, Qu, Xinru, Wang, Qingcheng, Kang, Wenbo, Liu, Baosheng, Xiao, Qingquan, Gao, Tinghong, Xie, Quan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385145/
https://www.ncbi.nlm.nih.gov/pubmed/37513193
http://dx.doi.org/10.3390/molecules28145313

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385145/
https://www.ncbi.nlm.nih.gov/pubmed/37513193
http://dx.doi.org/10.3390/molecules28145313

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