Tunable Contact Types and Interfacial Electronic Properties in TaS(2)/MoS(2) and TaS(2)/WSe(2) Heterostructures

Following the successful experimental synthesis of single-layer metallic 1T-TaS(2) and semiconducting 2H-MoS(2), 2H-WSe(2), we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS(2)/2H-MoS(2) and 1T-TaS(2)/2H-WSe(2) van der Waals hete...

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Detalles Bibliográficos
Autores principales: Zhu, Xiangjiu, Jiang, Hongxing, Zhang, Yukai, Wang, Dandan, Fan, Lin, Chen, Yanli, Qu, Xin, Yang, Lihua, Liu, Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385421/
https://www.ncbi.nlm.nih.gov/pubmed/37513478
http://dx.doi.org/10.3390/molecules28145607

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385421/
https://www.ncbi.nlm.nih.gov/pubmed/37513478
http://dx.doi.org/10.3390/molecules28145607

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