Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit

The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, an...

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Detalles Bibliográficos
Autores principales: Gao, Tianzhi, Yin, Chenyu, Chen, Yaolin, Chen, Ruibo, Yan, Cong, Liu, Hongxia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385467/
https://www.ncbi.nlm.nih.gov/pubmed/37512749
http://dx.doi.org/10.3390/mi14071438

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385467/
https://www.ncbi.nlm.nih.gov/pubmed/37512749
http://dx.doi.org/10.3390/mi14071438

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