Sub-5 nm Gate-Length Monolayer Selenene Transistors

Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we use...

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Detalles Bibliográficos
Autores principales: Li, Qiang, Tan, Xingyi, Yang, Yongming, Xiong, Xiaoyong, Zhang, Teng, Weng, Zhulin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385583/
https://www.ncbi.nlm.nih.gov/pubmed/37513262
http://dx.doi.org/10.3390/molecules28145390

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385583/
https://www.ncbi.nlm.nih.gov/pubmed/37513262
http://dx.doi.org/10.3390/molecules28145390

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