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Sub-5 nm Gate-Length Monolayer Selenene Transistors
Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we use...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385583/ https://www.ncbi.nlm.nih.gov/pubmed/37513262 http://dx.doi.org/10.3390/molecules28145390 |