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Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell
In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10385679/ https://www.ncbi.nlm.nih.gov/pubmed/37512760 http://dx.doi.org/10.3390/mi14071449 |