Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

We used capacitance–voltage (C–V), conductance–voltage (G–V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging...

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Detalles Bibliográficos
Autores principales: Mallem, Siva Pratap Reddy, Puneetha, Peddathimula, Lee, Dong-Yeon, Kim, Yoonkap, Kim, Han-Jung, Im, Ki-Sik, An, Sung-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386025/
https://www.ncbi.nlm.nih.gov/pubmed/37513143
http://dx.doi.org/10.3390/nano13142132

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386025/
https://www.ncbi.nlm.nih.gov/pubmed/37513143
http://dx.doi.org/10.3390/nano13142132

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