Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the...

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Detalles Bibliográficos
Autores principales: Lv, Hanghang, Cao, Yanrong, Ma, Maodan, Wang, Zhiheng, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Lv, Ling, Zheng, Xuefeng, Wang, Yongkun, Tian, Wenchao, Ma, Xiaohua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386137/
https://www.ncbi.nlm.nih.gov/pubmed/37512768
http://dx.doi.org/10.3390/mi14071457

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386137/
https://www.ncbi.nlm.nih.gov/pubmed/37512768
http://dx.doi.org/10.3390/mi14071457

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