Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn

GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a p...

Descripción completa

Detalles Bibliográficos
Autores principales: Evropeitsev, Eugenii, Nechaev, Dmitrii, Jmerik, Valentin, Zadiranov, Yuriy, Kulagina, Marina, Troshkov, Sergey, Guseva, Yulia, Berezina, Daryia, Shubina, Tatiana, Toropov, Alexey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/
https://www.ncbi.nlm.nih.gov/pubmed/37513064
http://dx.doi.org/10.3390/nano13142053

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/
https://www.ncbi.nlm.nih.gov/pubmed/37513064
http://dx.doi.org/10.3390/nano13142053

Ejemplares similares