Cargando…
Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a p...
Autores principales: | , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/ https://www.ncbi.nlm.nih.gov/pubmed/37513064 http://dx.doi.org/10.3390/nano13142053 |
_version_ | 1785081628673966080 |
---|---|
author | Evropeitsev, Eugenii Nechaev, Dmitrii Jmerik, Valentin Zadiranov, Yuriy Kulagina, Marina Troshkov, Sergey Guseva, Yulia Berezina, Daryia Shubina, Tatiana Toropov, Alexey |
author_facet | Evropeitsev, Eugenii Nechaev, Dmitrii Jmerik, Valentin Zadiranov, Yuriy Kulagina, Marina Troshkov, Sergey Guseva, Yulia Berezina, Daryia Shubina, Tatiana Toropov, Alexey |
author_sort | Evropeitsev, Eugenii |
collection | PubMed |
description | GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs’ thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminescence measurements in an ultrasmall QW region enclosed in a nanocolumn revealed that narrow lines of individual excitons were localized on potential fluctuations attributed to 2-3-monolayer-high GaN clusters, which appear in QWs with an average thickness of 1 ML. The kinetics of luminescence with increasing temperature is determined via the change in the population of localized exciton states. At low temperatures, spin-forbidden dark excitons with lifetimes of ~40 ns predominate, while at temperatures elevated above 120 K, the overlying bright exciton states with much faster recombination dynamics determine the emission. |
format | Online Article Text |
id | pubmed-10386294 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103862942023-07-30 Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn Evropeitsev, Eugenii Nechaev, Dmitrii Jmerik, Valentin Zadiranov, Yuriy Kulagina, Marina Troshkov, Sergey Guseva, Yulia Berezina, Daryia Shubina, Tatiana Toropov, Alexey Nanomaterials (Basel) Article GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs’ thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminescence measurements in an ultrasmall QW region enclosed in a nanocolumn revealed that narrow lines of individual excitons were localized on potential fluctuations attributed to 2-3-monolayer-high GaN clusters, which appear in QWs with an average thickness of 1 ML. The kinetics of luminescence with increasing temperature is determined via the change in the population of localized exciton states. At low temperatures, spin-forbidden dark excitons with lifetimes of ~40 ns predominate, while at temperatures elevated above 120 K, the overlying bright exciton states with much faster recombination dynamics determine the emission. MDPI 2023-07-12 /pmc/articles/PMC10386294/ /pubmed/37513064 http://dx.doi.org/10.3390/nano13142053 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Evropeitsev, Eugenii Nechaev, Dmitrii Jmerik, Valentin Zadiranov, Yuriy Kulagina, Marina Troshkov, Sergey Guseva, Yulia Berezina, Daryia Shubina, Tatiana Toropov, Alexey Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title | Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title_full | Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title_fullStr | Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title_full_unstemmed | Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title_short | Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn |
title_sort | single-exciton photoluminescence in a gan monolayer inside an aln nanocolumn |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/ https://www.ncbi.nlm.nih.gov/pubmed/37513064 http://dx.doi.org/10.3390/nano13142053 |
work_keys_str_mv | AT evropeitseveugenii singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT nechaevdmitrii singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT jmerikvalentin singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT zadiranovyuriy singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT kulaginamarina singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT troshkovsergey singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT gusevayulia singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT berezinadaryia singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT shubinatatiana singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn AT toropovalexey singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn |