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Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn

GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a p...

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Autores principales: Evropeitsev, Eugenii, Nechaev, Dmitrii, Jmerik, Valentin, Zadiranov, Yuriy, Kulagina, Marina, Troshkov, Sergey, Guseva, Yulia, Berezina, Daryia, Shubina, Tatiana, Toropov, Alexey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/
https://www.ncbi.nlm.nih.gov/pubmed/37513064
http://dx.doi.org/10.3390/nano13142053
_version_ 1785081628673966080
author Evropeitsev, Eugenii
Nechaev, Dmitrii
Jmerik, Valentin
Zadiranov, Yuriy
Kulagina, Marina
Troshkov, Sergey
Guseva, Yulia
Berezina, Daryia
Shubina, Tatiana
Toropov, Alexey
author_facet Evropeitsev, Eugenii
Nechaev, Dmitrii
Jmerik, Valentin
Zadiranov, Yuriy
Kulagina, Marina
Troshkov, Sergey
Guseva, Yulia
Berezina, Daryia
Shubina, Tatiana
Toropov, Alexey
author_sort Evropeitsev, Eugenii
collection PubMed
description GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs’ thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminescence measurements in an ultrasmall QW region enclosed in a nanocolumn revealed that narrow lines of individual excitons were localized on potential fluctuations attributed to 2-3-monolayer-high GaN clusters, which appear in QWs with an average thickness of 1 ML. The kinetics of luminescence with increasing temperature is determined via the change in the population of localized exciton states. At low temperatures, spin-forbidden dark excitons with lifetimes of ~40 ns predominate, while at temperatures elevated above 120 K, the overlying bright exciton states with much faster recombination dynamics determine the emission.
format Online
Article
Text
id pubmed-10386294
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-103862942023-07-30 Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn Evropeitsev, Eugenii Nechaev, Dmitrii Jmerik, Valentin Zadiranov, Yuriy Kulagina, Marina Troshkov, Sergey Guseva, Yulia Berezina, Daryia Shubina, Tatiana Toropov, Alexey Nanomaterials (Basel) Article GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs’ thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminescence measurements in an ultrasmall QW region enclosed in a nanocolumn revealed that narrow lines of individual excitons were localized on potential fluctuations attributed to 2-3-monolayer-high GaN clusters, which appear in QWs with an average thickness of 1 ML. The kinetics of luminescence with increasing temperature is determined via the change in the population of localized exciton states. At low temperatures, spin-forbidden dark excitons with lifetimes of ~40 ns predominate, while at temperatures elevated above 120 K, the overlying bright exciton states with much faster recombination dynamics determine the emission. MDPI 2023-07-12 /pmc/articles/PMC10386294/ /pubmed/37513064 http://dx.doi.org/10.3390/nano13142053 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Evropeitsev, Eugenii
Nechaev, Dmitrii
Jmerik, Valentin
Zadiranov, Yuriy
Kulagina, Marina
Troshkov, Sergey
Guseva, Yulia
Berezina, Daryia
Shubina, Tatiana
Toropov, Alexey
Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title_full Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title_fullStr Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title_full_unstemmed Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title_short Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
title_sort single-exciton photoluminescence in a gan monolayer inside an aln nanocolumn
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/
https://www.ncbi.nlm.nih.gov/pubmed/37513064
http://dx.doi.org/10.3390/nano13142053
work_keys_str_mv AT evropeitseveugenii singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT nechaevdmitrii singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT jmerikvalentin singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT zadiranovyuriy singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT kulaginamarina singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT troshkovsergey singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT gusevayulia singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT berezinadaryia singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT shubinatatiana singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn
AT toropovalexey singleexcitonphotoluminescenceinaganmonolayerinsideanalnnanocolumn