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Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn
GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a p...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10386294/ https://www.ncbi.nlm.nih.gov/pubmed/37513064 http://dx.doi.org/10.3390/nano13142053 |