Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

[Image: see text] For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the g...

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Detalles Bibliográficos
Autores principales: Akhtar, Fatima, Dabrowski, Jaroslaw, Lukose, Rasuole, Wenger, Christian, Lukosius, Mindaugas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10401564/
https://www.ncbi.nlm.nih.gov/pubmed/37479219
http://dx.doi.org/10.1021/acsami.3c05860

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10401564/
https://www.ncbi.nlm.nih.gov/pubmed/37479219
http://dx.doi.org/10.1021/acsami.3c05860

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